A 183 GHz low noise amplifier module with 5.5 dB noise figure for the conical-scanning microwave imager sounder (CMIS) program

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2001, Pages 1955-1958

  Raja, R ^a   Nishimoto, M ^a   Osgood, B ^a   Barsky, M ^a   Sholley, M ^a   Quon, R ^a   Barber, G ^a   Liu, P ^a   Lai, R ^a   Hinte, F ^a   Haviland, G ^a   Vacek, B ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GAIN MEASUREMENT; INTEGRATED CIRCUIT LAYOUT; MICROELECTRONIC PROCESSING; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SIGNAL NOISE MEASUREMENT;

CONICAL SCANNING MICROWAVE IMAGER SOUNDER; LOW NOISE AMPLIFIER MODULE; NOISE FIGURE;

MICROWAVE AMPLIFIERS;

EID: 0035683168     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. A 183 GHz low noise amplifier module for the conical-scanning microwave imager sounder (CMIS) program
2. Measurements on a 215-GHz subharmonically pumped waveguide mixer using planar back-to-back air-bridge Schottky diodes
3. 170-220 GHz radiometric sensors (space-borne, air-borne, ground-borne): Technology and applications
4. An InP HEMT MMIC LNA with 7.2 dB gain at 190 GHz
5. D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT production process
6. 190 GHz InP HEMT MMIC LNA with dry etched backside vias
7. MMIC low-noise amplifiers and applications above 100 GHz
8. W-band & D-band low noise amplifiers using 0.1 μm pseudomorphic InAlAs/InGaAs/InP HEMTs
9. 305 GHz fT using 0.1 μm gate-length graded channel pseudomorphic InxGa1xAs/In0.52Al0.48As HEMTs
10. A super low-noise 0.1 μm T-gate InAlAs/InGaAs/InP HEMT
11. 650Å self-aligned gate pseudomorphic AlInAs/GaInAs HEMTs
12. Fully passivated W-band InGaAs/InAlAs/InP monolithic low noise amplifiers
13. A high performance and low DC power V-band MMIC LNA using 0.1 μm InGaAs/InAlAs/InP HEMT technology