InP HEMT amplifier development for G-band (140-220 GHz) applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 175-177

  Lai, R ^a   Barsky, M ^a   Grundbacher, R ^a   Liu, P H ^a   Chin, T P ^a   Nishimoto, M ^a   Elmajarian, R ^a   Rodriguez, R ^a   Tran, L ^a   Gutierrez, A ^a   Oki, A ^a   Streit, D ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASPECT RATIO; BANDWIDTH; CURRENT VOLTAGE CHARACTERISTICS; DRY ETCHING; FABRICATION; GATES (TRANSISTOR); HIGH ELECTRON MOBILITY TRANSISTORS; HIGH FREQUENCY AMPLIFIERS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; SUBSTRATES; TRANSCONDUCTANCE;

SPOT NOISE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 17644447790     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. Fully passivated W-band InGaAs/InAlAs/InP monolithic low noise amplifiers
2. A high volume 0.1 um InP HEMT production process for applications from 2 GHz to 200 GHz
3. 305 GHz fT using 0.1μm gate-length graded channel pseudomorphic InxGa1-xAs/In0.52Al0.48As HEMTs