D-band MMIC LNAs with 12 dB gain at 155 GHz fabricated on a high yield InP HEMT MMIC production process

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 241-244

  Lai, R ^a   Wang, H ^a   Chen, Y C ^a   Block, T ^a   Liu, P H ^a   Streit, D C ^a   Tran, D ^a   Siegel, P ^a   Barsky, M ^a   Jones, W ^a   Gaier, T ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH ELECTRON MOBILITY TRANSISTORS; LIGHT AMPLIFIERS; SEMICONDUCTING INDIUM PHOSPHIDE; WSI CIRCUITS;

LOW NOISE AMPLIFIERS (LNA); SOLID STATE AMPLIFIERS;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0030678240     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)