Degradation analysis of 0.1 μm InP hemts using low frequency noise characterization

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 619-622

  Chou, Y C ^a   Guan, H ^b   Li, G P ^b   Lai, R ^a   Grundbacher, R ^a   Leung, D ^a   Eng, D ^a   Block, T ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEGRADATION ANALYSIS; DEGRADATION ORIGIN; JUNCTION DEGRADATION; NOISE CHARACTERIZATION;

DEGRADATION; ELECTRIC CURRENTS; NATURAL FREQUENCIES; SCANNING ELECTRON MICROSCOPY; SPURIOUS SIGNAL NOISE; TRANSMISSION ELECTRON MICROSCOPY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23744476111     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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