0.1 μm InP HEMT devices and MMICs for cryogenic low noise amplifiers from X-band to W-band

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2002, Pages 455-458

  Grundbacher, Ronald ^a   Lai, R ^a   Barsky, M ^a   Tsai, R ^a   Gaier, T ^a   Weinreb, S ^a   Dawson, D ^a   Bautista, J J ^a   Davis, J F ^a   Erickson, N ^a   Block, T ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; CRYOGENICS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

LOW NOISE AMPLIFIERS (LNA);

AMPLIFIERS (ELECTRONIC);

EID: 0036049266     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. 0.1 μm InGaAs/InAlAs/InP HEMT production process for MMW applications from 2-200 GHz
2. W-band InP wideband MMIC LNA with 30 K noise temperature
3. Cryogenic, X-band and Ka-band InP HEMT based LNAs for the Deep Space Network
4. Low noise amplifiers in InP technology for pseudo correlating millimeter wave radiometer
5. Low noise cryogenic X-band amplifier using wetetched, hydrogen passivated InP HEMT devices
6. A cryogenic focal plane array for 85-115 GHz using MMIC preamplifiers