Reliability investigation of 0.07-μm InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In0.75Ga0.25As channel

IEEE Electron Device Letters

Volumn 24, Issue 6, 2003, Pages 378-380

  Chou, Y C ^a   Leung, D ^a   Lai, R ^a   Grundbacher, R ^a   Barsky, M ^a   Kan, Q ^a   Tsai, R ^a   Wojtowicz, M ^a   Eng, D ^a   Tran, L ^a   Block, T ^a   Liu, P H ^a   Nishimoto, M ^a   Oki, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

Activation energy; HEMT; MMICs; Reliability

Indexed keywords

ACTIVATION ENERGY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; RELIABILITY; SEMICONDUCTING INDIUM COMPOUNDS;

JUNCTION TEMPERATURE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0041590953     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.813357     Document Type: Article

References (17)

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