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Volumn , Issue , 2003, Pages 288-290

96 GHz static frequency divider in SiGe bipolar technology

Author keywords

SiGe; Static frequency dividers

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC NETWORK ANALYSIS; ELECTRIC NETWORK TOPOLOGY; ELECTRIC POTENTIAL; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; TRANSISTORS;

EID: 0348195825     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252413     Document Type: Conference Paper
Times cited : (18)

References (9)
  • 5
    • 0037461882 scopus 로고    scopus 로고
    • 100 GHz dynamic frequency divider in SiGe bipolar technology
    • Jan.
    • A. Rylyakov, L. Klapproth, B. Jagannathan, G. Freeman, "100 GHz dynamic frequency divider in SiGe bipolar technology" Electronics Letters, vol. 39, pp. 217 - 218, Jan. 2003.
    • (2003) Electronics Letters , vol.39 , pp. 217-218
    • Rylyakov, A.1    Klapproth, L.2    Jagannathan, B.3    Freeman, G.4
  • 7
    • 0030213937 scopus 로고    scopus 로고
    • Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s
    • H.-M. Rein and M. Moller, "Design considerations for very-high-speed Si-bipolar IC's operating up to 50 Gb/s", IEEE Journal of Solid-State Circuits, vol. 31, pp. 1076-1090, 1996.
    • (1996) IEEE Journal of Solid-State Circuits , vol.31 , pp. 1076-1090
    • Rein, H.-M.1    Moller, M.2
  • 9
    • 0001319148 scopus 로고
    • The design of wideband transistor feedback amplifiers
    • E. M. Cherry and D. E. Hooper, "The design of wideband transistor feedback amplifiers", Proc. IEEE, vol. 110, pp. 375-389, 1963
    • (1963) Proc. IEEE , vol.110 , pp. 375-389
    • Cherry, E.M.1    Hooper, D.E.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.