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Volumn 26, Issue 1, 2005, Pages 11-13

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f T and 505-GHz fmax

Author keywords

Heterojunction bipolar transistor (HBT)

Indexed keywords

CAPACITANCE; DIGITAL INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; EMITTER COUPLED LOGIC CIRCUITS; INTEGRATED CIRCUIT LAYOUT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES;

EID: 12444326284     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.840715     Document Type: Article
Times cited : (37)

References (12)
  • 1
    • 0037810909 scopus 로고    scopus 로고
    • "Challenges and opportunities for InP HBT mixed signal circuit technology"
    • Santa Barbara, CA, May 12-16
    • J. Zolper, "Challenges and opportunities for InP HBT mixed signal circuit technology," in Proc. IEEE Int. Conf. Indium Phosphide Related Materials, Santa Barbara, CA, May 12-16, 2003, pp. 8-11.
    • (2003) Proc. IEEE Int. Conf. Indium Phosphide Related Materials , pp. 8-11
    • Zolper, J.1
  • 2
    • 0005413227 scopus 로고    scopus 로고
    • "Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems"
    • T. Enoki, E. Sano, and T. Ishibashi, "Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems," Int. J. High-Speed Electron. Syst., vol. 11, no. 1, pp. 137-158, 2001.
    • (2001) Int. J. High-Speed Electron. Syst. , vol.11 , Issue.1 , pp. 137-158
    • Enoki, T.1    Sano, E.2    Ishibashi, T.3
  • 11
    • 0032624230 scopus 로고    scopus 로고
    • "Reduction of the base-collector capacitance in InP-InGaAs heterojunction bipolar transistors due to electron velocity modulation"
    • Apr
    • Y. Betser and D. Ritter, "Reduction of the base-collector capacitance in InP-InGaAs heterojunction bipolar transistors due to electron velocity modulation," IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 628-633, Apr. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.4 , pp. 628-633
    • Betser, Y.1    Ritter, D.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.