-
1
-
-
0037810909
-
"Challenges and opportunities for InP HBT mixed signal circuit technology"
-
Santa Barbara, CA, May 12-16
-
J. Zolper, "Challenges and opportunities for InP HBT mixed signal circuit technology," in Proc. IEEE Int. Conf. Indium Phosphide Related Materials, Santa Barbara, CA, May 12-16, 2003, pp. 8-11.
-
(2003)
Proc. IEEE Int. Conf. Indium Phosphide Related Materials
, pp. 8-11
-
-
Zolper, J.1
-
2
-
-
0005413227
-
"Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems"
-
T. Enoki, E. Sano, and T. Ishibashi, "Prospects of InP-based IC technologies for 100-Gbit/s-class lightwave communications systems," Int. J. High-Speed Electron. Syst., vol. 11, no. 1, pp. 137-158, 2001.
-
(2001)
Int. J. High-Speed Electron. Syst.
, vol.11
, Issue.1
, pp. 137-158
-
-
Enoki, T.1
Sano, E.2
Ishibashi, T.3
-
3
-
-
0000270710
-
"Scaling of InGaAs-InAlAs HBTs for high speed mixed-signal and mm-wave ICs"
-
M. J. W. Rodwell, M. Urteaga, Y. Betser, D. Scott, M. Dahlström, S. Lee, S. Krishnan, T. Mathew, S. Jaganathan, Y. Wei, D. Mensa, J. Guthrie, R. Pullela, Q. Lee, B. Agarwal, U. Bhattacharya, and S. Long, "Scaling of InGaAs-InAlAs HBTs for high speed mixed-signal and mm-wave ICs," Int. J. High Speed Electron. Syst., vol. 11, no. 1, pp. 159-215, 2001.
-
(2001)
Int. J. High Speed Electron. Syst.
, vol.11
, Issue.1
, pp. 159-215
-
-
Rodwell, M.J.W.1
Urteaga, M.2
Betser, Y.3
Scott, D.4
Dahlström, M.5
Lee, S.6
Krishnan, S.7
Mathew, T.8
Jaganathan, S.9
Wei, Y.10
Mensa, D.11
Guthrie, J.12
Pullela, R.13
Lee, Q.14
Agarwal, B.15
Bhattacharya, U.16
Long, S.17
-
4
-
-
20144387253
-
"Ultra high frequency static dividers >150 GHz in a narrow mesa InGaAs/InP DHBT technology"
-
Montreal, QC, Canada, Sep. 13-14
-
Z. Griffith, M. Dahlström, M. J. W. Rodwell, M. Urteaga, R. Pierson, P. Rowell, B. Brar, S. Lee, N. Nguyen, and C. Nguyen, "Ultra high frequency static dividers >150 GHz in a narrow mesa InGaAs/InP DHBT technology," in Proc. IEEE Bipolar/BiCMOS Circuits Technology Meeting, Montreal, QC, Canada, Sep. 13-14, 2004, pp. 176-179.
-
(2004)
Proc. IEEE Bipolar/BiCMOS Circuits Technology Meeting
, pp. 176-179
-
-
Griffith, Z.1
Dahlström, M.2
Rodwell, M.J.W.3
Urteaga, M.4
Pierson, R.5
Rowell, P.6
Brar, B.7
Lee, S.8
Nguyen, N.9
Nguyen, C.10
-
5
-
-
2442424247
-
c ratio"
-
May
-
c ratio," IEEE Electron Device Lett., vol. 25. no. 5. pp. 250-252, May 2004.
-
(2004)
IEEE Electron Device Lett.
, vol.25
, Issue.5
, pp. 250-252
-
-
Griffith, Z.1
Dahlström, M.2
Urteaga, M.3
Rodwell, M.J.W.4
-
6
-
-
19944433649
-
max > 500 GHz"
-
Notre Dame, IN. Jun. 21-23
-
max > 500 GHz," in Proc. Device Research Conf., Notre Dame, IN. Jun. 21-23, 2004.
-
(2004)
Proc. Device Research Conf.
-
-
Sawdai, D.1
Chang, P.C.2
Gambin, V.3
Zeng, X.4
Yamamoto, J.5
Loi, K.6
Leslie, G.7
Barsky, M.8
Gutierrez-Aitken, A.9
Oki, A.10
-
7
-
-
4444222089
-
max using a graded carbon-doped base"
-
Salt Lake City, UT, Jun. 23-25
-
max using a graded carbon-doped base," in Proc. Device Research Conf., Salt Lake City, UT, Jun. 23-25,2003.
-
(2003)
Proc. Device Research Conf.
-
-
Dahlström, M.1
Griffith, Z.2
Urteaga, M.3
Rodwell, M.J.W.4
Fang, X.-M.5
Lubyshev, D.6
Wu, Y.7
Fastenau, J.M.8
Liu, W.K.9
-
8
-
-
0041385870
-
"Wideband DHBTs using a graded carbon-doped InGaAs base"
-
Jul
-
M. Dahlström, X.-M. Fang, D. Lubyshev, M. Urteaga, S. Krishnan, N. Parthasarathy, Y. M. Kim, Y. Wu, J. M. Fastenau, W. K. Liu, and M. J. W. Rodwell, "Wideband DHBTs using a graded carbon-doped InGaAs base," IEEE Electron Device Lett., vol. 24, no. 7, pp. 433-435, Jul. 2003.
-
(2003)
IEEE Electron Device Lett.
, vol.24
, Issue.7
, pp. 433-435
-
-
Dahlström, M.1
Fang, X.-M.2
Lubyshev, D.3
Urteaga, M.4
Krishnan, S.5
Parthasarathy, N.6
Kim, Y.M.7
Wu, Y.8
Fastenau, J.M.9
Liu, W.K.10
Rodwell, M.J.W.11
-
10
-
-
0030401732
-
"An accurate, large signal, high frequency model for GaAs HBTs"
-
Nov. 3-6
-
L. Camnitz, S. Kofol, T. Low, and S. R. Bahl, "An accurate, large signal, high frequency model for GaAs HBTs," in Proc. IEEE Gallium Arsenide Integrated Circuit (GaAsIC) Symp., Nov. 3-6, 1996, pp. 303-306.
-
(1996)
Proc. IEEE Gallium Arsenide Integrated Circuit (GaAsIC) Symp.
, pp. 303-306
-
-
Camnitz, L.1
Kofol, S.2
Low, T.3
Bahl, S.R.4
-
11
-
-
0032624230
-
"Reduction of the base-collector capacitance in InP-InGaAs heterojunction bipolar transistors due to electron velocity modulation"
-
Apr
-
Y. Betser and D. Ritter, "Reduction of the base-collector capacitance in InP-InGaAs heterojunction bipolar transistors due to electron velocity modulation," IEEE Trans. Electron Devices, vol. 46, no. 4, pp. 628-633, Apr. 1999.
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, Issue.4
, pp. 628-633
-
-
Betser, Y.1
Ritter, D.2
-
12
-
-
3943092602
-
max over 300 GHz in a new manufacturable technology"
-
Aug
-
max over 300 GHz in a new manufacturable technology," IEEE Electron Device Lett., vol. 25, no. 8, pp. 520-522, Aug. 2004.
-
(2004)
IEEE Electron Device Lett.
, vol.25
, Issue.8
, pp. 520-522
-
-
He, G.1
Howard, J.2
Le, M.3
Partyka, P.4
Li, B.5
Kim, G.6
Hess, R.7
Bryie, R.8
Lee, R.9
Rustomji, S.10
Pepper, J.11
Kail, M.12
Helix, M.13
Elder, R.14
Jansen, D.15
Harff, N.16
Prairie, J.17
Daniel, E.18
Gilbert, B.19
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