Transferred-substrate InP/InGaAs/InP double heterojunction bipolar transistors with fmax = 425 GHz

Electronics Letters

Volumn 37, Issue 17, 2001, Pages 1096-1098

  Lee, S ^a   Kim, H J ^a   Urteaga, M ^a   Krishnan, S ^a   Wei, Y ^a   Dahlstrom M ^a   Rodwell, M ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; GAIN MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES; VOLTAGE MEASUREMENT;

DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM GALLIUM ARSENIDE TRANSISTORS; INDIUM PHOSPHIDE TRANSISTORS; TRANSFERRED SUBSTRATE TECHNOLOGY;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0035899202     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010728     Document Type: Article

References (3)

1. 48 GHz digital ICs using transferred substrate HBT
2. max transferred-substrate heterojunction bipolar transistor IC technology
3. Submicron transferred-substrate heterojunction bipolar transistors