Characterization of the silicon nitride-thermal oxide interface in oxide-nitride-oxide structures by ELS, XPS, ellipsometry, and numerical simulation

Microelectronics Reliability

Volumn 38, Issue 5, 1998, Pages 745-751

  Gritsenko, V A ^a,c   Svitasheva, S N ^a   Petrenko, I P ^a   Novikov, Yu N ^a   Morokov, Yu N ^b   Wong, Hei ^c   Kwok, R W M ^d   Chan, R W M ^d  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^d CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

Ellipsometry; ELS; Silicon oxide nitride interface; XPS

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON TRAPS; ELLIPSOMETRY; OXIDATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

POSITIVE CHARGE ACCUMULATION; TRAP CENTERS;

HETEROJUNCTIONS;

EID: 0032068170     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00019-5     Document Type: Article

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