Empirical model of data retention degradation in stacked-gate flash EEPROM cells with new interpoly dielectric of an Oxide-Nitride-Oxide-Nitride (ONON) layer

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 795-801

  Kim, Jang Han ^a   Choi, Jung Bum ^a  

^a Chungbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; DIELECTRIC MATERIALS; GATES (TRANSISTOR); MATHEMATICAL MODELS; NITRIDES; THRESHOLD VOLTAGE;

DATA RETENTION; EMPIRICAL MODELS; THERMOIONIC EMISSIONS; VOLTAGE SHIFT RATE;

MOS DEVICES;

EID: 14844334211     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.023     Document Type: Conference Paper

References (17)

1. N.R. Mielke Proc 21th 1983 IEEE IRPS 106 1983
2. K. Wu, C.S. Pan, J.J. Shaw, P. Freiberger, and G. Sery 28th 1990 IEEE IRPS 145 1990
3. C.S. Pan, K. Wu, P. Freiberger, A. Chatterjee, and G. Sery IEEE Trans Electron Dev ED-37 1990 1439
4. S. Mori, Y. Kaneko, N. Arai, Y. Ohshima, H. Araki, and K. Narita Proc 28th 1990 IEEE IRPS 132 1990
5. B.J. Shin, K.H. Park, and S.I. Yang J Korean Phys Soc 41 5 2002 801
6. B.J. Shin, K.H. Park, J.H. Kim, and J.B. Choi J Korean Phys Soc 39 2001 374
7. J.H. Kim, J.B. Choi, B.J. Shin, and K.H. Park Semicond Sci Technol 18 2 2003 158
8. T. Watanabe, A. Menjoh, T. Mochizuki, S. Shinozaki, and O. Ozawa Proc 23th 1985 IEEE IRPS 18 1985
9. S.J. Shen, C.C.H. Hsu, and M.S. Liand Jpn J Appl Phys 37 1 1998 4306
10. H. Aozasa, I. Fujiwara, A. Nakamura, and Y. Komatsu Jpn J Appl Phys 38 Part 1 1999 1441
11. H. Nozawa, and S. Hohyama Jpn J Appl Phys 21 2 1982 L111
12. C. Pan, K. Wu, and G. Sery IEEE Electron Dev Lett EDL-12 2 1991 51
13. S. Mori, E. Sakagami, Y. Kaneko, Y. Oshima, N. Arai, and K. Yoshikawa IEEE Trans Electron Dev ED-39 1992 283
14. C. Pan, K. Wu, D. Chin, G. Sery, and J. Kiely IEEE Electron Dev Lett EDL-12 9 1991 506
15. M. Hermann, and A. Schenk J Appl Phys 77 9 1995 4522
16. S.J. Shen, C.C.H. Hsu, and M.S. Liand Jpn J Appl Phys 37 1 1998 4306
17. B.D. Salvo, G. Ghibaudo, G. Pananakakis, G. Reimbold, F. Mondond, and B. Guillaumot IEEE Trans Electron Dev ED-46 1999 1518