Quantitative evaluation of local charge trapping in dielectric stacked gate structures using Kelvin probe force microscopy

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 5, 2002, Pages 1914-1917

  Lubarsky, G ^a   Shikler, R ^a   Ashkenasy, N ^a   Rosenwaks, Y ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTROSTATICS; FERMI LEVEL; HEAT TREATMENT; POISSON EQUATION; SEMICONDUCTOR DEVICES; STATISTICS; TEMPERATURE;

CHARGE DISTRIBUTION; CONTACT FORCE MODE; CONTACT POTENTIAL DIFFERENCE; DIELECTRIC STACK GATE STRUCTURES; ELECTRON AFFINITY; FERMI-DIRAC STATISTICS; KELVIN PROBE FORCE MICROCOPY; LOCAL CHARGE TRAPPING; SEMICONDUCTOR DEVICE SIMULATION;

SILICON NITRIDE;

EID: 0036026367     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1502701     Document Type: Article

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