Pentacene organic thin-film transistors - Molecular ordering and mobility

IEEE Electron Device Letters

Volumn 18, Issue 3, 1997, Pages 87-89

  Gundlach, D J ^a   Lin, Y Y ^a   Jackson, T N ^a   Nelson, S F ^b   Schlom, D G ^a  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b Oak Institute for the Study of International Human Rights   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; DIELECTRIC MATERIALS; EVAPORATION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON WAFERS;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAY; PENTACENE ORGANIC THIN FILM TRANSISTOR; POSITIVE GATE VOLTAGE; POSITIVE THRESHOLD VOLTAGE; VACUUM GRADIENT SUBLIMATION;

THIN FILM TRANSISTORS;

EID: 0031103927     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.556089     Document Type: Article

References (13)

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