Temperature and gate voltage dependent transport across a single organic semiconductor grain boundary

Journal of Applied Physics

Volumn 90, Issue 3, 2001, Pages 1342-1349

  Chwang, Anna B ^a,b   Frisbie, C Daniel ^a  

^a University of Minnesota ^*  (United States)

^b UNIVERSAL DISPLAY CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035423437     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1376404     Document Type: Article

References (42)

1. H. E. Katz and Z. Bao, J. Phys. Chem. B 104, 671 (2000); H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Trans. Electron Devices 46, 1258 (1999); D. J. Gundlach, T. N. Jackson, D. G. Schlom, and S. F. Nelson, Appl. Phys. Lett. 74, 3302 (1999); C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
2. H. E. Katz and Z. Bao, J. Phys. Chem. B 104, 671 (2000); H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Trans. Electron Devices 46, 1258 (1999); D. J. Gundlach, T. N. Jackson, D. G. Schlom, and S. F. Nelson, Appl. Phys. Lett. 74, 3302 (1999); C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
3. H. E. Katz and Z. Bao, J. Phys. Chem. B 104, 671 (2000); H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Trans. Electron Devices 46, 1258 (1999); D. J. Gundlach, T. N. Jackson, D. G. Schlom, and S. F. Nelson, Appl. Phys. Lett. 74, 3302 (1999); C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
4. H. E. Katz and Z. Bao, J. Phys. Chem. B 104, 671 (2000); H. Klauk, D. J. Gundlach, J. A. Nichols, and T. N. Jackson, IEEE Trans. Electron Devices 46, 1258 (1999); D. J. Gundlach, T. N. Jackson, D. G. Schlom, and S. F. Nelson, Appl. Phys. Lett. 74, 3302 (1999); C. D. Dimitrakopoulos, S. Purushothaman, J. Kymissis, A. Callegari, and J. M. Shaw, Science 283, 822 (1999).
5. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
6. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
7. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
8. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
9. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
10. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
11. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
12. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
13. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
14. See, for example, J. Fleig, S. Rodewald, and J. Maier, J. Appl. Phys. 87, 2372 (2000); V. Ravikumar, R. P. Rodrigues, and V. P. Dravid, Phys. Rev. Lett. 75, 4063 (1995); L. L. Kazmerski, Surf. Sci. Rep. 19, 169 (1993); F. Greuter and G. Blatter, Semicond. Sci. Technol. 5, 111 (1990); Polycrystalline Semiconductors: Grain Boundaries and Interfaces, edited by H. J. Moller, H. P. Strunk, and J. H. Werner, Proceedings of the International Symposium, Malente, 29 August-29 September 1988 (Springer. Berlin, 1989); D. R. Clarke, Annu. Rev. Mater. Sci. 17, 57 (1987); Polycrystalline Semiconductors: Physical Properties and Applications, edited by G. Harbeke, Proceedings of the International School of Materials Science and Technology, Italy, 1-15 July 1984 (Springer, Berlin, 1985); Grain Boundaries in Semiconductors, edited by H. J. Leamy, G. E. Pike, and C. H. Seager, Proceedings of the MRS Annual Meeting. November 1981 (Elsevier Science, Boston, 1982; J. Martinez, A. Criado, and J. Piqueras, J. Appl. Phys. 52, 1301 (1981); Grain Boundary Structure and Properties, edited by G. A. Chadwick and D. A. Smith (Academic, London, 1976).
15. (a) J. H. Schön and B. Batlogg, J. Appl. Phys. 89, 336 (2001);
16. (b) G. Horowitz and M. Hajlaoui, Adv. Mater. 12, 1046 (2000);
17. (c) J. H. Schön and B. Batlogg. Appl. Phys. Lett. 74, 260 (1999);
18. (d) T. W. Kelley and C. D. Frisbie, J. Phys. Chem. B (in press).
19. (a) O. Pellegrino, M. R. Vilar, G. Horowitz, F. Kouki, F. Garnier, J. D. L. da Silva, and A. M. B. do Rego, Thin Solid Films 327-329, 252 (1998);
20. (b) L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. P. Fung, and H. E. Katz. Phys. Rev. B 57, 2271 (1998);
21. (c) J. H. Schön, Ch. Kloc, R. A. Laudise, and B. Batlogg, ibid. 58, 952 (1998);
22. (d) G. Horowitz, S. Romdhane, H. Bouchriha, P. Delannoy, J.-L. Monge, F. Kouki, and P. Valat, Synth. Met. 90, 187 (1997);
23. (e) A. J. Lovinger and L. J. Rothberg, J. Mater. Res. 11, 1581 (1996);
24. (f) L. Torsi, A. Dodabalapur, L. J. Rothberg, A. W. Fung, and H. E. Katz, Science 272, 1462 (1996);
25. (g) L. Torsi, A. Dodabalapur, H. E. Katz, J. Appl. Phys. 78, 1088 (1995);
26. (h) G. Horowitz, B. Bachet, A. Yassar, P. Lang, F. Demanze, J.-L. Fave, and F Garnier, Chem. Mater. 7, 1337 (1995);
27. (i) R. A. Laudise, P. M. Bridenbaugh, T. Siegrist, R. M. Fleming, H. E. Katz, and A. J. Lovinger, J. Cryst. Growth 152, 241 (1995);
28. (j) F. Garnier, R. Hajlaoui, A. Yassar, and P. Srivastava, Science 265, 1684 (1994);
29. (k) H. Fujimoto, U. Nagashima, H. Inokuchi, K. Seki, Y. Cao, H. Nakahara, J. Nakayama, M. Hoshino, and K. Fukuda, J. Chem. Phys. 92, 4077 (1990).
30. (a) A. B. Chwang and C. D. Frisbie, J. Phys. Chem. B 104, 12202 (2000);
31. (b) K. Seshadri and C. D. Frisbie, Appl. Phys. Lett. 78, 993 (2001).
32. (a) H. Nussbaumer, F. P. Baumgartner, G. Willeke, and E. Bucher, J. Appl. Phys. 83, 292 (1998);
33. (b) C. H. Ling, Solid-State Electron. 27, 633 (1984);
34. (c) J. Levinson, F. R. Shepherd, P. J. Scanlon, W. D. Westwood, G. Este, and M. Rider, J. Appl. Phys. 53, 1193 (1982);
35. (d) C. H. Seager and G. E. Pike, Appl. Phys. Lett. 35, 709 (1979);
36. (e) G. E. Pike and C. H. Seager, J. Appl. Phys. 50, 3414 (1979);
37. (f) C. H. Seager and T. G. Castner, ibid. 49, 3879 (1978).
38. E. L. Granstrom and C. D. Frisbie, J. Phys. Chem. B 103, 8842 (1999).
39. S. A. Campbell, The Science and Engineering of Microelectronic Fabrication (Oxford University Press, New York 1996), p. 426.
40. Because most of the charge transport through the organic semiconductor occurs in the first one or two layers of the film, the effective height of the film is ∼5 nm.
41. S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, and T. N. Jackson, Appl. Phys. Lett. 72, 1854 (1998).
42. M. Fujihira, Annu. Rev. Mater. Sci. 29, 353 (1999).