Electron and hole injection in metal-oxide-nitride-oxide-silicon structures

Journal of Experimental and Theoretical Physics

Volumn 102, Issue 5, 2006, Pages 810-820

  Nasyrov, K A ^a   Shaimeev S S ^b   Gritsenko, V A ^b   Han, J H ^c   Kim, C W ^c   Lee, J W ^c  

^a INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ELECTRON TUNNELING; ENERGY GAP; HOLE MOBILITY; IONIZATION; PHONONS;

AMORPHOUS SILICON NITRIDE; BANDGAP WIDTH; METAL-OXIDE-NITRIDE-OXIDE-SILICON; PHONON-COUPLED TRAP MODEL;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 33746389284     PISSN: 10637761     EISSN: None     Source Type: Journal    
DOI: 10.1134/S106377610605013X     Document Type: Article

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