Simulation, fabrication and characterization of a 3.3 V flash ZE2PROM array implemented in a 0.8 μm CMOS process

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 263-273

  Ranaweera, J ^a   Ng, W T ^a   Salama, C A T ^a  

^a UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; COMPUTER SIMULATION; DATA STORAGE EQUIPMENT; SEMICONDUCTOR JUNCTIONS; ZENER DIODES;

FLASH MEMORY CELLS; MEMORY ARRAYS;

CMOS INTEGRATED CIRCUITS;

EID: 0033079498     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00238-X     Document Type: Article

References (6)

1. Horiuchi M, Katto H. FCAT-A low voltage high speed alterable n-channel nonvolatile memory device. IEEE Trans Electron Devices 1979;26:914.
2. Ranaweera J, Kalastirsky I, Dibu-Caiole A, Ng WT, Salama CAT. Performance limitations of a flash E PROM cell, programmed with Zener induced hot electrons. IEEE Non-Volatile Memory Workshop, 1997.
3. 2PROM cell. U.S. Patent Application, 1996.
4. 2PROM cells. Solid State Electron 1996;39:981.
5. Trapp OD, Lopp LJ, Blanchard RA. Semiconductor technology handbook, ch. 3. CA: Technology Associates, 1993.
6. 2PROM cells. 8th Canadian Semiconductor Technology Conference. 1997:42.