Hole trapping on the twofold-coordinated silicon atom in SiO2

Physics of the Solid State

Volumn 44, Issue 6, 2002, Pages 1028-1030

  Shaposhnikov, A V ^a   Gritsenko, V A ^a   Zhidomirov, G M ^b   Roger, M ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b BORESKOV INSTITUTE OF CATALYSIS   (Russian Federation)

^c SERVICE DE PHYSIQUE DE L ETAT CONDENSÉ   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036017821     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1485002     Document Type: Article

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