Exoelectron emission spectroscopy of silicon nitride thin films

Applied Physics Letters

Volumn 80, Issue 15, 2002, Pages 2743-2745

  Rosenman, G ^a   Naich, M ^a   Molotskii, M ^a   Dechtiar, Yu ^b   Noskov, V ^b  

^a TEL AVIV UNIVERSITY   (Israel)

^b RIGA TECHNICAL UNIVERSITY   (Latvia)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER PROCESS; ELECTRON-HOLE RECOMBINATION; ENERGY SPECTROSCOPY; EXPERIMENTAL DATA; SILICON NITRIDE THIN FILMS; TEMPERATURE REGIONS; THERMALLY STIMULATED EXOELECTRON EMISSIONS; THIN INSULATING FILM;

AMORPHOUS FILMS; EMISSION SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THERMIONIC EMISSION;

AMORPHOUS SILICON;

EID: 79956056056     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1469656     Document Type: Article

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