NROM™ - A new non-volatile memory technology: From device to products

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 213-223

  Bloom, Ilan ^a   Pavan, Paolo ^a,b   Eitan, Boaz ^a  

^a Saifun Semiconductors Ltd   (Israel)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

EEPROM; Embedded NVM; Flash; Multibit per cell; Non volatile memory; NROM ; Two bit per cell

Indexed keywords

ELECTRON TRAPS; EMBEDDED SYSTEMS; FLASH MEMORY; GATES (TRANSISTOR); ROM; SEMICONDUCTOR JUNCTIONS;

FLOATING GATE TECHNOLOGY;

NONVOLATILE STORAGE;

EID: 0035498568     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00625-6     Document Type: Conference Paper

References (2)

1. Can NROM™, a 2-bit trapping storage cell, give a real challenge to floating gate cells?