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Volumn 41, Issue 2 A, 2002, Pages 552-556
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Fully quantum-mechanical calculation of hole direct tunneling current in ultrathin gate oxide p-channel metal-oxide-semiconductor devices
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Author keywords
Gate tunneling current; Hole direct tunneling; p+ polysilicon gate; pMOSFET; Quantum mechanical effect; Self consistent calculation; SOI
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Indexed keywords
COMPUTER SIMULATION;
ELECTRODES;
ELECTRON TUNNELING;
GATES (TRANSISTOR);
POISSON EQUATION;
QUANTUM THEORY;
SILICON ON INSULATOR TECHNOLOGY;
SUBSTRATES;
WAVE EQUATIONS;
HOLE DIRECT TUNNELING;
MOS DEVICES;
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EID: 0036478638
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.41.552 Document Type: Article |
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Times cited : (4)
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References (8)
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