Numerical simulation of intrinsic defects in SiO2 and Si3N4

Semiconductors

Volumn 35, Issue 9, 2001, Pages 997-1005

  Gritsenko, V A ^a   Novikov, Yu N ^a   Shaposhnikov, A V ^a   Morokov, Yu N ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF COMPUTATIONAL TECHNOLOGIES   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035457885     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1403563     Document Type: Article

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