Sensitivity-limiting factors of at-wavelength extreme ultraviolet lithography mask blank inspection

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 6 B, 2006, Pages 5359-5372

  Tezuka, Yoshihiro ^a   Tanaka, Toshihiko ^a   Terasawa, Tsuneo ^a   Tomie, Toshihisa ^b  

^a ASSOCIATION OF SUPER ADVANCED ELECTRONICS TECHNOLOGIES ASET   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

At wavelength inspection; Back illuminated CCD; Electromagnetic simulation; EUVL; Mask blank; Multilayer defect; Surface roughness

Indexed keywords

IMAGING SYSTEMS; MASKS; MULTILAYERS; OPTICAL TRANSFER FUNCTION; SIGNAL TO NOISE RATIO; SURFACE ROUGHNESS; ULTRAVIOLET RADIATION;

AT-WAVELENGTH INSPECTION; BACK-ILLUMINATED CHARGE-COUPLED-DEVICE (BI-CCD); ELECTROMAGNETIC SIMULATION; EXTREME UV LITHOGRAPHY (EUVL); MASK BLANK; MULTILAYER DEFECT;

PHOTOLITHOGRAPHY;

EID: 33745647292     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.5359     Document Type: Review

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