EUVL defect printability at the 32 nm node

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 5374, Issue PART 2, 2004, Pages 791-796

  Gullikson, E M ^a   Tejnil, E ^b   Liang, T ^b   Stivers, A R ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Defect printability; EUVL; Multilayer

Indexed keywords

DEFECT PRINTABILITY; EUVL; EXTREME ULTRAVIOLET LITHOGRAPHY (EUVL); PHASE DEFECTS;

APPROXIMATION THEORY; COMPUTER SIMULATION; IMAGING SYSTEMS; MASKS; MULTILAYERS; OPTICAL SYSTEMS; ULTRAVIOLET RADIATION;

LITHOGRAPHY;

EID: 3843141562     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.558816     Document Type: Conference Paper

References (3)

1. E.M. Gullikson, C. Cerjan, D.G. Stearns, P.B. Mirkarimi, D.W. Sweeney, "Practical approach for modeling extreme ultraviolet lithography mask defects." J. Vac Sci. Technol. B 20, 81-6 (2002).
2. P.B. Mirkarimi, E. Spiller, S.L. Baker, V. Sperry, D.G. Stearns, E.M. Gullikson, "Developing a viable multilayer coating process for extreme ultraviolet lithography reticles." J. Microlithography, Microfabrication, and Microsystems 3, 139-45 (2004).
3. S.P. Hau-Riege, A. Barty, P.B. Mirkarimi, D.G. Stearns, H.N. Chapman, D.W. Sweeney, W.M. Clift, E. Gullikson, Moon-Suk Yi, "Defect repair for extreme-ultraviolet lithography (EUVL) mask blanks." SPIE Proceedings Vol. 5307, 331-8 (2003).