SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1233-1237

Role of defects at nanoscale ZnO and Cu (In,Ga) Se 2 semiconductor interfaces

(1) Strzhemechny, Y M a

a TEXAS CHRISTIAN UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT-DRIVEN MECHANISMS; NANOSCALE CHEMICALS; SEMICONDUCTOR SYSTEMS; STOICHIOMETRIC DEFECTS;

ELECTRON TUNNELING; GRAIN BOUNDARIES; INTERFACES (MATERIALS); NANOTECHNOLOGY; SCHOTTKY BARRIER DIODES; ZINC OXIDE;

SEMICONDUCTOR MATERIALS;

EID: 33745513110 PISSN: 07342101 EISSN: None Source Type: Journal
DOI: 10.1116/1.2167079 Document Type: Article

Times cited : (3)

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