Photoluminescence measurements on cubic InGaN layers deposited on a SiC substrate

Semiconductor Science and Technology

Volumn 21, Issue 7, 2006, Pages 846-851

  Pacheco Salazar, D G ^a,d   Leite, J R ^a   Cerdeira, F ^b   Meneses, E A ^b   Li, S F ^c   As, D J ^c   Lischka, K ^c  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSITY OF PADERBORN   (Germany)

^d UNIVERSIDAD NACIONAL DE SAN AGUSTÍN DE AREQUIPA   (Peru)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT ABSORPTION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SILICON CARBIDE; SPECTROSCOPIC ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; STOKES-LIKE SHIFT;

LAYERED MANUFACTURING;

EID: 33745232536     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/7/003     Document Type: Article

References (28)

1. Nakamura S 1991 Japan. J. Appl. Phys. 30 L1075
2. Chichibu S F et al 2000 Appl. Phys. Lett. 76 1671
3. Bellaiche L, Mattila T, Wang L W, Wei S H and Zunger A 1999 Appl. Phys. Lett. 74 1842
4. Bernardi F and Fiorentini V 1998 Phys. Rev. B 57 R9427
5. Wetzel C, Takeuchi T, Amano H and Akasaki I 1999 J. Appl. Phys. 85 3786
6. Teles L K, Furtmueller J, Scolfaro L M R, Leite J R and Bechstedt F 2000 Phys. Rev. B 62 2475
7. Chichibu S F et al 2003 J. Vac. Sci. Technol. B 21 1856
8. Husberg O, Khartchenko A, As D J, Vogelsang H, Frey T, Schikora D, Lischka K, Noriega O C, Tabata A and Leite J R 2001 Appl. Phys. Lett. 79 1243
9. Chichibu S F et al 2001 Appl. Phys. Lett. 79 3600
10. Silveira E, Tabata A, Leite J R, Trentin R, Lemos V, Frey T, As D J, Schikora D and Lischka K 1999 Appl. Phys. Lett. 75 3602
11. Lemos V, Silveira E, Leite J R, Tabata A, Trentin R, Scolfaro L M R, Frey T, As D J, Schikora D and Lischka K 2000 Phys. Rev. Lett. 84 3666
12. Husberg O, Khartchenko A, Vogelsang H, As D J, Lischka K, Noriega O C, Tabata A, Scolfaro L M R and Leite J R 2002 Physica E 13 1090
13. Tabata A, Teles L K, Scolfaro L M R, Leite J R, Kharchenko A, Frey T, As D J, Schikora D and Lischka K 2002 Appl. Phys. Lett. 80 769
14. Teles L K, Ferreira L G, Leite J R, Kharchenko A, Husberg O, As D J, Schikora D and Lischka K 2003 Appl. Phys. Lett. 82 4274
15. Fernandez J R L, Noriega O C, Soares J A N T, Cerdeira F, Meneses E A, Leite J R, As D J, Schikora D and Lischka K 2003 Solid State Commun. 125 205
16. Schikora D, Hankeln M, As D J, Lischka K, Litz T, Waag A, Buhrow T and Henneberger F 1996 Phys. Rev. B 54 R8381
17. Pacheco-Salazar D G, Cerdeira F, Meneses E A, Leite J R, Li S F, As D J and Lischka K 2005 J. Cryst. Growth 284 379-87
18. Li S F, As D J, Lischka K, Pacheco-Salazar D G, Scolfaro L M R, Cerdeira F and Meneses E A 2005 Mater. Res. Symp. Proc. 831 E8.15
19. Harris G L (ed) 1995 Properties of Silicon Carbide (London: INSPEC) p 31
20. Yamada T and Itoh K M 2002 Mater. Sci. Forum 389-393 675
21. Aspnes D E 1980 Handbook on Semiconductors ed T S Moss (Amsterdam: North-Holland) p 109
22. Goldhahn R, Scheiner J, Shokhovets S, Frey T, Kohler U, As D J and Lischka K 2000 Appl. Phys. Lett. 76 291
23. Teles L K, Furtmueller J, Scolfaro L M R, Leite J R and Bechstedt F 2001 Phys. Rev. B 63 85204
24. Davydov V Yu et al 2002 Phys. Status Solidi b 229 R1
25. Davydov V Yu et al 2002 Phys. Status Solidi b 229 R4
26. Wu J, Walukiewicz W, Shan W, Yu K M, Ager J A III, Li S X, Haller E E, Lu H and Schaff W J 2003 J. Appl. Phys. 94 4457
27. Matsuoka T, Okamoto H, Nakao M, Harima H and Kurimoto E 2002 Appl. Phys. Lett. 81 1246
28. Bechstedt F and Furthmüller J 2002 J. Cryst. Growth 246 315