Optical and electrical characterization of free-standing 3C-SiC films grown on undulant 6in Si substrates

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 675-678

  Yamada, Toshimichi ^a   Itoh, Kohei M ^a  

^a KEIO UNIVERSITY   (Japan)

Author keywords

Free excitons; Hall effect measurements; Photoluminescence; Undulant substrates

Indexed keywords

ELECTRIC PROPERTIES; EXCITONS; FILM GROWTH; HALL EFFECT; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SILICON CARBIDE; SUBSTRATES; DOPING (ADDITIVES); NITROGEN; TEMPERATURE;

CRYSTALLINE QUALITY; FREE EXCITONS; HALL EFFECT MEASUREMENTS; UNDULANT SUBSTRATES; HALL EFFECT MEASUREMENT; HALL MEASUREMENTS; LOW TEMPERATURE PHOTOLUMINESCENCE; NITROGEN-BOUND EXCITONS; OPTICAL AND ELECTRICAL CHARACTERIZATION; SHARP FEATURES;

THIN FILMS; SILICON CARBIDE;

EID: 0038634587     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.675     Document Type: Article

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