SCOPUS 정보 검색 플랫폼

Materials Research Society Symposium Proceedings

Volumn 831, Issue , 2005, Pages 423-428

Strong room temperature 510 nm emission from cubic InGaN/GaN multiple quantum wells

(8) Li, S F a As, D J a Lischka, K a Pacheco Salazar, D G b Scolfaro, L M R b Leite, J R b Cerdeira, F c Meneses, E A c

a UNIVERSITY OF PADERBORN (Germany)

b UNIVERSITY OF SÃO PAULO (Brazil)

c UNIVERSITY OF CAMPINAS (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT POLARIZATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; POLYMETHYL METHACRYLATES; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS; THERMODYNAMIC STABILITY;

BANDGAP ENERGY; METASTABLE MODIFICATIONS; MULTI QUANTUM WELLS (MQW); POLARIZATION FIELDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 23844436941 PISSN: 02729172 EISSN: None Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper

Times cited : (3)

References (9)

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