Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy

Applied Physics Letters

Volumn 79, Issue 22, 2001, Pages 3600-3602

  Chichibu, S F ^a   Sugiyama, M ^a   Kuroda, T ^b   Tackeuchi, A ^b   Kitamura, T ^c   Nakanishi, H ^c   Sota, T ^b   DenBaars, S P ^d   Nakamura, S ^d   Ishida, Y ^e   Okumura, H ^e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b WASEDA UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

^d University of California   (United States)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035956029     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1421082     Document Type: Article

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