Photoluminescence associated with quantum dots in cubic GaN/InGaN/GaN double heterostructures

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 13, Issue 2-4, 2002, Pages 1090-1093

  Husberg, O ^a   Khartchenko, A ^a   Vogelsang, H ^a   As, D J ^a   Lischka, K ^a   Noriega, O C ^b   Tabata, A ^b   Scolfaro, L M R ^b   Leite, J R ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b UNIVERSITY OF SÃO PAULO   (Brazil)

Author keywords

III nitrides; Phase separation; Quantum dot

Indexed keywords

ANNEALING; GALLIUM NITRIDE; PHASE SEPARATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; X RAY DIFFRACTION ANALYSIS;

QUANTUM DOT (QD) STRUCTURES;

HETEROJUNCTIONS;

EID: 0036493076     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00310-7     Document Type: Article

References (12)