Effective density-of-states approach to QM correction in MOS structures

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 401-407

  Ma, Yutao ^a   Li, Zhijian ^a   Liu, Litian ^a   Tian, Lilin ^a   Yu, Zhiping ^b  

^a TSINGHUA UNIVERSITY   (China)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; CHARGE CARRIERS; ELECTRONIC DENSITY OF STATES; MATHEMATICAL MODELS; MOSFET DEVICES; QUANTUM THEORY; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE;

QUANTUM MECHANICAL EFFECTS; SCHRODINGER EQUATION; SUBBAND STRUCTURE; SURFACE LAYER EFFECTIVE DENSITY OF STATES; THRESHOLD VOLTAGE SHIFT;

MOS DEVICES;

EID: 0034159058     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00251-8     Document Type: Article

References (12)

1. Baccarani G., et al. IEEE Trans. Electron Dev. 31:1984;452.
2. Stern F. Phys. Rev. B. 5:1972;4891.
3. Ando T., et al. Rev. Mod. Phys. 54:1982;437.
4. Janik T., Majkusiak B. IEEE Trans. Electron Dev. 45:(6):1998;1263.
5. Van Dort M.J., et al. IEEE Trans. Electron Dev. 39:1992;932.
6. Jallepalli S., et al. IEEE Trans. Electron Dev. 44:1997;297.
7. Hareland S.A., Krishnamurthy S., et al. IEEE Trans. Electron Dev. 43:(1):1996;90.
8. Janik T., Majkusiak B. J. Appl. Phys. l75:(10):1994;5186.
9. Van Dort M.J., et al. Solid-State Electron. 37:1994;435.
10. Slotboom J.W., de Graaf H.C. Solid-State Electron. 19:1976;857.
11. Hareland S.A., Manassian M., Shin W.K., et al. IEEE Trans. Electron Devices. 45:(7):1998;1487.
12. Sze S.M. Physics of semiconductor devices. 2nd ed. 1981;Wiley, New York.