A comprehensive analytical subthreshold swing (S) model for double-gate MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 1086-1090

  Chen, Qiang ^a   Agrawal, Bhavna ^b   Meindl, James D ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b IBM   (United States)

Author keywords

Double gate MOSFET; MOSFETs; Scale length; Scaling; Subthreshold swing; Undoped

Indexed keywords

CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MATHEMATICAL MODELS; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING;

SUBTHRESHOLD SWING;

MOSFET DEVICES;

EID: 0036611198     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003757     Document Type: Article

References (13)

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7. Generalized scale length for two-dimensional effects in MOSFETs
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11. Electronic structures and phono-limited electron mobility of double-gate silicon-on-insulator Si inversion layers
12. Evanescent-mode analysis of short-channel effects in fully depleted SOI and related MOSFETs