On the role of hydrogen in hole-induced electron trap creation

Semiconductor Science and Technology

Volumn 19, Issue 11, 2004, Pages 1333-1338

  Chang, M H ^a   Zhang, J F ^a  

^a LIVERPOOL JOHN MOORES UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; HYDROGEN; INTERFACES (MATERIALS); MICROSTRUCTURE; MOSFET DEVICES; THERMAL EFFECTS;

ELECTRICAL STRESS; GATE OXIDES; HYDROGENOUS SPECIES; P-JUNCTUION;

ELECTRON TRAPS;

EID: 9144259648     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/11/022     Document Type: Article

References (35)

1. Chen W, Balasinski A and Ma T P 1993 IEEE Trans. Electron Devices 40 187
2. Zhang J F and Eccleston W 1995 IEEE Trans. Electron Devices 42 1269
3. Ielmini D, Spinelli A S, Rigamonti M A and Lacaita A L 2000 IEEE Trans. Electron Devices 47 1258
4. DiMaria D J and Stathis J H 2001 J. Appl. Phys. 89 5015
5. Kirton M J and Uren M J 1989 Adv. Phys. 38 367
6. Kaczer B, Degraeve R, Pangon N and Groeseneken G 2000 IEEE Trans. Electron Devices 47 1514
7. Degraeve R, Groeseneken G, Bellens R, Ogier J L, Depas M, Roussel P J and Maes H E 1998 IEEE Trans. Electron Devices 45 904
8. Zhang J F, Taylor S and Eccleston W 1992 J. Appl. Phys. 71 5989
9. Vishnubhotla L and Ma T P 1991 Appl. Phys. Lett. 59 3595
10. Zhang W D, Zhang J F, Lalor M, Burton B, Groeseneken G and Degraeve R 2002 IEEE Trans. Electron Devices 49 1868
11. Fleetwood D M and Saks N S 1996 J. Appl. Phys. 79 1583
12. Fleetwood D M, Winokur P S, Flament O and Leray J L 1999 Appl. Phys. Lett. 74 2969
13. Haneji N, Vishnubhotla L and Ma T P 1991 Appl. Phys. Lett. 59 3416
14. Brown D B and Saks N S 1991 J. Appl. Phys. 70 3734
15. Zhao C Z, Zhang J F, Groeseneken G, Degraeve R, Ellis J N and Beech C D 2001 J. Appl. Phys. 90 328
16. Sah C T, Sun J Y C and Tzou J J T 1983 Appl. Phys. Lett. 43 204
17. Coutinho J, Andersen O, Dobaczewski L, Nielsen K B, Peaker A R, Jones R, Oberg S and Briddon P R 2003 Phy. Rev. B 68 184106
18. 2 and its Interfaces ed Pantelides S T (New York: Pergamon) p 160
19. Zhang J F, Taylor S and Eccleston W 1992 J. Appl. Phys. 71 725
20. Esseni D, Bude J D and Selmi L 2002 IEEE Trans. Electron Devices 49 247
21. Bude J D, Weir B E and Silverman P J 1998 Tech. Dig. Int. Electron Devices Meet. 44 179
22. Do Thanh L and Balk P 1998 J. Electrochem. Soc. 135 1797
23. Stahlbush R E, Mrstik B J and Lawrence R K 1990 IEEE Trans. Nucl. Sci. 37 1641
24. Fowler W B and Edwards A H 1998 Radiat. Eff. Defects Solids 146 11
25. Fleetwood D M 2002 Microelectron. Reliab. 42 523
26. Zhang W D, Zhang J F, Uren M J, Groeseneken G, Degaeve R, Lalor M and Burton D 2001 Appl. Phys. Lett. 79 3092
27. Stahlbush R E and Cartier E 1994 IEEE Trans. Nucl. Sci. 41 1844
28. Zhang J F, Sii H K, Degraeve R and Groeseneken G 2000 J. Appl. Phys. 87 2967
29. Hughes R C 1978 Solid-State Electron. 21 251
30. Zhang J F, Zhao C Z, Groeseneken G and Degraeve R 2003 J. Appl. Phys. 93 6107
31. Al-kofahi I S, Zhang J F and Groeseneken G 1997 J. Appl. Phys. 81 2686
32. Stahlbush R E, Edwards A H, Griscom D L and Mrstik B J 1993 J. Appl. Phys. 73 658
33. Saks N S, Klein R B and Griscom D L 1988 IEEE Trans. Nucl. Sci. 35 1234
34. Van den bosch G, Groeseneken G, Maes H E, Klein R B and Saks N S 1994 J. Appl. Phys. 75 2073
35. Saks N S, Klein R B, Stahlbush R E, Mrstik B J and Rendell R W 1993 IEEE Trans. Nucl. Sci. 40 1341