A thermal-fully hydrodynamic model for semiconductor devices and applications to III-V HBT simulation

IEEE Transactions on Electron Devices

Volumn 44, Issue 9, 1997, Pages 1349-1359

  Benvenuti, Augusto ^a,b   Coughran Jr , William M ^a,b   Pinto, Mark R ^a,b  

^a POLITECNICO DI TORINO   (Italy)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; HOT CARRIERS; NEGATIVE RESISTANCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; THERMAL EFFECTS;

THERMAL FULLY HYDRODYNAMIC MODEL;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0031235338     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.622585     Document Type: Article

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