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Volumn 48, Issue 2, 2001, Pages 399-401

A new method for extracting carrier mobility from monte carlo device simulation

Author keywords

Carrier mobility; Legendre polynomial expansion; Monte carlo simulation, parameter extraction

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; FEATURE EXTRACTION; HARMONIC ANALYSIS; MONTE CARLO METHODS; PARAMETER ESTIMATION; POLYNOMIALS; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS;

EID: 0035248897     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902748     Document Type: Article
Times cited : (4)

References (10)
  • 2
    • 0026852585 scopus 로고    scopus 로고
    • Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte Carlo calculations
    • S.-C. Lee and T.-W. TangTransport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte Carlo calculations Solid-State Electron., vol. 35, pp. 561-569, 1992.
    • Solid-State Electron., Vol. 35, Pp. 561-569, 1992.
    • Lee, S.-C.1    Tang, T.-W.2
  • 3
    • 0023291891 scopus 로고    scopus 로고
    • A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation
    • S. Bandyopadhay et al., A rigorous technique to couple Monte Carlo and drift-diffusion models for computationally efficient device simulation IEEE Trans. Electron Devices, vol. ED-34, pp. 392-399, 1987.
    • IEEE Trans. Electron Devices, Vol. ED-34, Pp. 392-399, 1987.
    • Bandyopadhay, S.1
  • 7
    • 0031079523 scopus 로고    scopus 로고
    • 2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations
    • W. Liang, N. Goldsman, I. Mayergoyz, and P. J. Oldiges2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations IEEE Trans. Electron Devices, vol. 44, pp. 257-267, 1997.
    • IEEE Trans. Electron Devices, Vol. 44, Pp. 257-267, 1997.
    • Liang, W.1    Goldsman, N.2    Mayergoyz, I.3    Oldiges, P.J.4
  • 10
    • 33747343376 scopus 로고    scopus 로고
    • An analytical expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices
    • T.-W. Tang, X. Wang, H. Gan, and M. K. leongAn analytical expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices VLSI Design, to be published.
    • VLSI Design, to Be Published.
    • Tang, T.-W.1    Wang, X.2    Gan, H.3    Leong, M.K.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.