An analytic expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices

VLSI Design

Volumn 13, Issue 1-4, 2001, Pages 131-134

  Arnold, Erich ^b   Lomaev, Mikhail I ^a   Shitz, Dmitry V ^a   Skakun, Victor S ^a   Tarasenko, Victor F ^a  

^a INSTITUTE OF HIGH CURRENT ELECTRONICS   (Russian Federation)

^b WC Heraeus GmbH   (Germany)

Author keywords

Effective carder energy; Hydrodynamic simulation; Nonlocal mobility model; Thermal diffusion coefficient

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; HYDRODYNAMICS; MATHEMATICAL MODELS; THERMAL DIFFUSION;

HYDRODYNAMIC SIMULATION;

MOSFET DEVICES;

EID: 0035695883     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/2001/51736     Document Type: Article

References (12)

1. Diffusion of hot and cold electrons in semiconductor barriers
2. Conduction current and generalized Einstein relations for degenerate semiconductors and metals
3. Two formulations of semiconductor transport equations
4. Dgrad(v) or grad(Dy)
5. Comment on the use of the electron temperature concept for nonlinear transport problems in semiconductor p-n junction
6. Two formulations of semiconductor transport equations based on spherical harmonic expansion of the Boltzmann transport equations
7. Transport equations for electrons in two-valley semiconductors
8. An improved hydrodynamic transport model for silicon
9. Comparison of semiconductor transport models using a Monte Carlo consistency test
10. The hot-electron problem in small semiconductor devices
11. Influence of hydrodynamic models in the prediction of submicrometer device characteristics