Two formulations of semiconductor transport equations based on spherical harmonic expansion of the Boltzmann transport equation

IEEE Transactions on Electron Devices

Volumn 47, Issue 9, 2000, Pages 1726-1732

  Tang, Ting Wei ^a,c   Gan, Haitao ^b,c  

^a IEEE   (United States)

^b University of Massachusetts   (United States)

^c Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; HYDRODYNAMIC DEVICE SIMULATION; LEGENDRE COMPONENT; MACROSCOPIC TRANSPORT COEFFICIENT; SEMICONDUCTOR TRANSPORT EQUATION; SPHERICAL HARMONIC EXPANSION;

CARRIER MOBILITY; COMPUTER SIMULATION; FUNCTIONS; HARMONIC ANALYSIS; INTEGRAL EQUATIONS; MONTE CARLO METHODS; POISSON DISTRIBUTION; POLYNOMIALS; SEMICONDUCTOR DEVICES; TRANSPORT PROPERTIES;

CURRENT DENSITY;

EID: 0034275437     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.861583     Document Type: Article

References (18)

1. R. Stratton, "Diffusion of hot and cold electrons in semiconductor barriers," Phys. Rev., vol. 126, pp. 2002-2014, 1962.
2. K. B10tekjaer, "Transport equations for electrons in two-valley semiconductors," IEEE Trans. Electron Devices, vol. ED-17, pp. 3817, 1970.
3. R. Stratton, "Semiconductor current-flow equation (diffusion and degeneracy)," IEEE Trans. Electron Devices, vol. ED-19, pp. 1288-1292, 1972.
4. P. T. Landsberg and S. A. Hope, "Different currents in semiconductors," Solid-State Electron., vol. 19, pp. 173-174, 1976.
5. A. H. Marshak, "On the diffusion current in semiconductors," Proc. IEEE, vol. 64, pp. 821-822, 1976.
6. P. T. Landsberg and S. A. Hope, "Two formulations of semiconductor transport equations," Solid State Electron., vol. 20, pp. 421129, 1977.
7. A. H. Marshak and D. Assaf III, "A generalized Einstein relation for semiconductors," Solid-State Electron., vol. 16, pp. 675-679, 1973.
8. K. M. vanVliet and A. H. Marshak, "Conduction current and generalized Einstein relations for degenerate semiconductors and metals," Phys. Stat. Sol. B, vol. 78, pp. 501-517, 1976.
9. T.-w. Tang, H. Gan, and M. K. leong, "Re-examination of the hot-carrier transport model using spherical harmonic expansion of the Boltzmann transport equation," in Ext. Abst. IWCE-6, Osaka, Japan, 1998, pp. 238-241.
10. W. Liang, N. Goldsman, I. Mayergoyz, and P. J. Oldiges, "2-D MOSFET modeling including surface effects and impact ionization by self-consistent solution of the Boltzmann, Poisson, and hole-continuity equations," IEEE Trans. Electron Devices, vol. 44, pp. 257-267, 1997.
11. S.-C. Lee and T.-w. Tang, "Transport coefficients for a silicon hydrodynamic model extracted from inhomogeneous Monte Carlo calculations," Solid-State Electron., vol. 35, pp. 561-569, 1992.
12. T.-w. Tang, S. Ramaswamy, and J. Nam, "An improved hydrodynamic transport model for silicon," IEEE Trans. Electron Devices, vol. 40, pp. 1469-1477, 1993.
13. D. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, "Two-dimensional transient simulation of an idealized high electron mobility transistor," lEEETrans. Electron Devices, vol. ED-32, pp. 1092-1102, 1985.
14. D. Chen et al, "An improved energy transport model including nonparabolicity and non-Maxwellian distribution effects," IEEE Electron Device Lett., vol. 13, pp. 26-28, 1992.
15. P. Landsberg, "£> grad(t>) or grad(.Dt>)?," J. Appl. Phys., vol. 56, pp. 1119-1122, 1984.
16. L. Y. Tremsina and V. A. Nikolaeva, "On the monotone finite difference schemes for energy transport models," IEEE Trans. Electron Devices, vol.42, pp. 1189-1192, 1995.
17. G. Z. Garber, "Quasihydrodynamic model of IMPATT diodes," J. Commun. Tech. Electron., vol. 40, pp. 100-104, 1995.
18. S. Ramaswamy and T.-w. Tang, "Comparison of semiconductor transport models using a Monte Carlo consistency test," IEEE Trans. Electron Devices, vol. 41, pp. 76-83, 1994.