The Onsager reciprocity principle as a check of consistency for semiconductor carrier transport models

Physica A: Statistical Mechanics and its Applications

Volumn 289, Issue 3-4, 2001, Pages 422-458

  Muscato, Orazio ^a  

^a UNIVERSITY OF CATANIA   (Italy)

Author keywords

Fluid dynamics; Kinetic and transport theory; Modeling semiconductor devices; Monte Carlo method

Indexed keywords

COMPUTATIONAL FLUID DYNAMICS; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS; THERMODYNAMICS; TRANSPORT PROPERTIES;

ONSAGER RECIPROCITY PRINCIPLE;

SEMICONDUCTING SILICON;

EID: 0035863445     PISSN: 03784371     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0378-4371(00)00307-1     Document Type: Article

References (30)

1. W. Hänsch, The Drift-Diffusion Equation and its Applications in MOSFET Modeling, Springer, Wien, 1991.
2. S. Selberherr, Analysis and Simulation of Semiconductor Devices, Springer, Wien, 1984.
3. A.M. Anile, O. Muscato, Cont. Mech. Thermodyn. 8 (1996) 131.
4. S.E. Laux, M.V. Fischetti, Transport Models for advanced device simulation - Truth or consequences? Proceed. Bipolar-BicMos. Tech. Meeting, (1995), Minneapolis (MN), pp. 27-34.
5. L. Onsager, Phys. Rev. 37 (1931) 405.
6. S.R. De Groot, P. Mazur, Non Equilibrium Thermodynamics, Dover Publications, New York, 1985.
7. M.W. Wu, H.L. Cui, N.J. Horing, Phys. Rev. B 54 (1996) 2351.
8. A.M. Anile, O. Muscato, Phys. Rev. B 51 (1995) 16728.
9. R. Thoma, K.P. Westerholtz, H.J. Peifer, W. Engl, Semicond. Sci. Technol. 7 (1992) B328.
10. S. Pennisi, M. Trovato, Cont. Mech. Thermodyn. 7 (1995) 489.
11. A.M. Anile, M. Trovato, Phys. Lett. A 230 (1997) 387.
12. C. Jacoboni, L. Reggiani, Rev. Mod. Phys. 55 (1983) 645.
13. R. Stratton, Phys. Rev. B 126 (1962) 2002.
14. D. Chen, E.C. Kan, U. Ravaioli, Chi-Wang Shu, R.W. Dutton, IEEE Electron. Dev. Lett. 13 (1992) 26.
15. O. Muscato, An extended hydrodynamic model for silicon semiconductor devices, in: M. Brans (Ed.), Progress in Industrial Mathematics at ECMI 96, B.G. Teubner, Stuttgart, 1997.
16. D. Jou, J. Casas-Vasquez, G. Lebon, Extended Irreversible Thermodynamics, Springer, Berlin, 1993.
17. K. Blotekjaer, IEEE Trans. Electron. Dev. ED-17 (1970) 38.
18. G. Baccarani, M.R. Wordeman, Solid-State Electron. 29 (1982) 970.
19. M. Rudan, G. Baccarani, in: J. Jerome (Ed.), On the Structure and Closure-Condition of the Hydrodynamic Model, Special Issue VLSI Design, Vol. 3, 1995, pp. 115-129.
20. R. Thoma, A. Edmunds, B. Meinerzhagen, H.J. Peifer, W. Engl, IEEE Trans. Electron. Dev. ED-38 (1991) 1343.
21. O. Muscato, COMPEL 19 (2000) 812.
22. T. Tang, S. Ramaswamy, J. Nam, IEEE Trans. Electron. Dev. ED-40 (1993) 1469.
23. M. Ieong, T. Tang, IEEE Trans. Electron. Dev. 44 (1997) 2242.
24. A.M. Anile, S. Pennisi, Phys. Rev. B 46 (1992) 13 186.
25. I. Müller, T. Ruggeri, Extended Thermodynamics, Springer, Berlin, 1993.
26. C.D. Levermore, J. Stat. Phys. 83 (1996) 1021.
27. S.F. Liotta, A. Majorana, Energy-kinetic equations modeling electron transport in semiconductors, Preprint University of Catania (2000), http://babbage.sissa.it/abs/cond-mat/0003456.
28. A. Gnudi, D. Ventura, G. Baccarani, F. Odeh, Solid Stat. Electron. 36 (1993) 575.
29. S.E. Laux, M.V. Fischetti, D.J. Frank, IBM J. Res. Dev. 34 (1990) 466.
30. W.J. Conover, Practical Nonparametric Statistics, Wiley, New York, NY, 1999.