A simplified impact ionization model based on the average energy of hot-electron subpopulation

IEEE Electron Device Letters

Volumn 19, Issue 6, 1998, Pages 201-203

  Tang, Ting Wei ^a,c   Nam, Joonwoo ^b,c  

^a University of Massachusetts   (United States)

^b SAMSUNG Electronics   (South Korea)

^c IEEE   (United States)

Author keywords

Average energy of hot electron subpopulation; Flow line approach

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRONS; IONIZATION OF SOLIDS; MATHEMATICAL MODELS; MONTE CARLO METHODS;

HOT ELECTRON SUBPOPULATION; HYDRODYNAMIC TRANSPORT EQUATIONS; IMPACT IONIZATION MODEL;

HOT CARRIERS;

EID: 0032096664     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.678544     Document Type: Article

References (6)

1. P. G. Scrobohaci and T.-w. Tang, "Modeling of the hot electron subpopulation and its application to impact ionization in submicron silicon devices - Part I: Transport equation," IEEE Trans. Electron Devices, vol. 41, p. 1197, July 1994.
2. C.-S. Yao, J.-G. Ahn, Y.-J. Park, H.-S. Min, and R. W. Dutton, "Formulation of a tail electron hydrodynamic model based on Monte Carlo results," IEEE Electron Device Lett., vol. 16, p. 26, Jan. 1995.
3. R. K. Cook and J. Frey, "Two-dimensional simulation of energy transport effects in Si and GaAs MESFET's," IEEE Trans. Electron Devices, vol. ED-29, p. 970, June 1982.
4. 2," J. Appl. Phys., vol. 78, no. 5, p. 3174, 1995.
5. V. Agostinelli, T. Bordelon, X. Wang, K. Hasnat, C. Yeap, D. B. Lemersal, A. F. Tasch, and C. Maziar, "Two-dimensional energy dependent models for the simulation of substrate current in submicron MOSFET's," IEEE Trans. Electron Devices, vol. 41, p. 1784, Oct. 1994.
6. K. Hasnat, C. F. Yeap, J. Jallepalli, W. K. Shih, A. Hareland, V. M. Agostinelli, A. F. Tasch, and C. Maziar, "A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's," IEEE Trans. Electron Devices, vol. 43, p. 1264, Aug. 1996.