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Volumn 17, Issue 2, 1998, Pages 149-157
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Grid quality and its influence on accuracy and convergence in device simulation
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Author keywords
Accuracy; Breakdown; Convergence; Device design; Grid generation; Numerical analysis; Power semiconductor devices; Semiconductor device simulation
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Indexed keywords
COMPUTER SIMULATION;
CONVERGENCE OF NUMERICAL METHODS;
ELECTRIC BREAKDOWN OF SOLIDS;
ERROR ANALYSIS;
FINITE ELEMENT METHOD;
GRID GENERATION;
SEMICONDUCTOR DEVICE MODELS;
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EID: 0031998952
PISSN: 02780070
EISSN: None
Source Type: Journal
DOI: 10.1109/43.681264 Document Type: Article |
Times cited : (13)
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References (13)
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