On the applicability of nonself-consistent Monte Carlo device simulations

IEEE Transactions on Electron Devices

Volumn 49, Issue 6, 2002, Pages 1072-1074

  Jungemann, C ^a   Meinerzhagen, B ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

Device simulation; Monte Carlo method; Silicon

Indexed keywords

APPROXIMATION THEORY; COMPUTER SIMULATION; ELECTRIC FIELDS; MONTE CARLO METHODS; MOSFET DEVICES; SPURIOUS SIGNAL NOISE;

DEVICE SIMULATION;

ELECTRIC CURRENTS;

EID: 0036609955     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1003749     Document Type: Article

References (18)

1. Understanding hot-electron transport in silicon devices: Is there a shortcut?
2. Issues in modeling small devices
3. Coupled Monte Carlo-drift diffusion analysis of hot-electron effects in MOSFETs
4. PISCES-MC: A multiwindow and multimethod 2-D device simulator
5. On the accuracy and efficiency of substrate current calculations for sub-μm n-MOSFETs
6. Impact ionization and distribution functions in sub-micron nMOSFET technologies
7. Monte Carlo simulation of the CHISEL flash memory cell
8. Efficient Monte Carlo device modeling
9. Efficient Monte Carlo device simulation with automatic error control
10. Influence of thermal noise on drain current in very small Si-MOSFETs
11. Increasing importance of electronic thermal noise in sub-0.1 μm Si-MOSFETs
12. Consistent hydrodynamic and Monte-Carlo simulation of SiGe HBTs based on table models for the relaxation times
13. Impact of the velocity overshoot on the performance of NMOSFETs with gate lengths from 80 to 250 nm
14. Elementary scattering theory of the Si MOSFET
15. Two-dimensional numerical substrate current modeling for n-channel MOS transistors
16. Consistent gate and substrate current modeling based on energy transport and the lucky electron concept
17. Analysis of the stochastic error of stationary Monte Carlo device simulations