Time-dependent solution of a full hydrodynamic model including convective terms and viscous effect

VLSI Design

Volumn 6, Issue 1-4, 1998, Pages 173-176

  Xu, Deyin ^a,c,d   Tang, Ting Wei ^a   Kucherenko, Sergeis ^b  

^a University of Massachusetts   (United States)

^b NATIONAL RESEARCH NUCLEAR UNIVERSITY MEPHI   (Russian Federation)

^c UNIVERSITY OF MASSACHUSETTS   (United States)

^d GTE   (United States)

Author keywords

Ballistic diode; Convective terms; Full hydrodynamic model; Transient simulation; Viscous effect

Indexed keywords

COMPUTER SIMULATION; HEAT CONVECTION; HYDRODYNAMICS; MATHEMATICAL MODELS; MICROELECTRONICS; MONTE CARLO METHODS; VISCOSITY;

BALLISTIC DIODES;

SEMICONDUCTOR DIODES;

EID: 0031632573     PISSN: 1065514X     EISSN: None     Source Type: Journal    
DOI: 10.1155/1998/25145     Document Type: Article

References (6)

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2. Bank, Randolph E., Coughran, William M. JR., Fichtner, Wolfgang, Grosse, Eric H., Rose, Donald J., and Smith, R. Kent. "Transient Simulation of Silicon Devices and Circuits", IEEE Trans. Computer-Aided Design. Vol. CAD-4. No. 4, pp.436-451, Oct. 1985.
3. Xu, Deyin, "An Alternative Set of Hydrodynamic of Transport Equations for Silicon and Its Numerical Solvers." M.S. Thesis. University of Massachusetts at Amherst. May 1995.
4. Scharfetter, D. L. and Gummel, H. K., "Large-Signal Analysis of a Silicon Read Diode Oscillator", IEEE Trans. Electron Devices. Vol. ED-16, No. 1. pp.64-77, January 1969.
5. Tang, Ting-wei and Nam, Joonwoo, "Inclusion of Viscous Effects in The Hydrodynamic Modeling of Ultrasmall Silicon Devices", Proceedings of the Third International Workshop on Computational Electronics, pp.115-118, May 1994.
6. Gardner, Carl L., "Numerical Simulation of Steady-State Electron Shock Wave in a Submicrometer Semiconductor Device", IEEE Trans. Electron Devices. Vol. ED-38. No. 2, pp. 392-398. Feburary 1991.