GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates

Solid-State Electronics

Volumn 48, Issue 1, 2004, Pages 193-196

  LaRoche, J R ^a   Luo, B ^a   Ren, F ^a   Baik, K H ^a   Stodilka, D ^a   Gila, B ^a   Abernathy, C R ^a   Pearton, S J ^a   Usikov, A ^b   Tsvetkov, D ^b   Soukhoveev, V ^b   Gainer, G ^b   Rechnikov, A ^b   Dimitriev, V ^b   Chen, G T ^c   Pan, C C ^c   Chyi, J I ^c  

^a University of Florida   (United States)

^b TDI Inc   (United States)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; VAPOR PHASE EPITAXY;

SAPPHIRE SUBSTRATES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0142216313     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00290-9     Document Type: Article

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