Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 693-696

  Nagahara, M ^a   Kikkawa, T ^a   Adachi, N ^a   Tateno, Y ^a   Kato, S ^a   Yokoyama, M ^a   Yokogawa, S ^a   Kimura, T ^a   Yamaguchi, Y ^a   Hara, N ^a   Joshin, K ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; INTERMODULATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER AMPLIFIERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE;

HIGH VOLTAGE OPERATIONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036928695     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

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2. Y.Ando, Y.Okamoto, H.Miyamoto, N.Hayama, T.Nakayama, K.Kasahara, M. Kuzuhara, IEDM Tech. Digest, pp.381-384 (2001).
3. T.Jenkins, L.Kehias, P.Parikh, Y.-F. Wu, P.Chavakar, M.Moore,U.Mishra, Device Research Conf. Digest, pp.201-202 (2001).
4. Joel H. K Vuolevi, Timo Rahkonen and Jani P.A. Manninen, IEEE Trans. Microwave Theory Tech., vol. 49, pp.1383-1389, August 2001.
5. T.Kikkawa, M.Nagahara, N.Okamoto, Y.Tateno, Y.Yamaguchi, N.Hara, K.Joshin and P.M. Asbeck, IEDM Tech. Digest, pp.585-588 (2001).