1.1W/mm high power GaAs/InGaP composite channel FET with asymmetrical LDD structure at 26V operation

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 151-154

  Nakata, Ken ^a   Masuyama, Ryuji ^a   Nakajima, Shigeru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC DISTORTION; ELECTRON TRANSITIONS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

LIGHTLY DOPED DRAIN (LDD) STRUCTURES;

FIELD EFFECT TRANSISTORS;

EID: 0036438179     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. S.L. Fu, T.P. Chin, M.C. Ho, C.W. Tu, and P.M. Asbeck "Impact ionization coefficients in (100) GaInP", Appl. Phys. Lett. 66 (25), pp.3507-3509, 19 June, 1995.
2. S. Nakajima, K. Nakata, K. Tanaka, K Otobe, "An GaAs/InGaP Composite Channel FET for High Power Device Applications. IEICE Trans. Electron, Vol E84-C, No.10, p1300-1305, 2001.
3. R. Sakamoto, K. Akai, and M. Inoue "Real-Space Transfer and Hot-Electron Transport Properties in IIIV semiconductor Heterostructures" IEEE Trans. on Electron Devices, Vol.36, no. 10, pp2344-2352, 1989.
4. N. Hara, Y.Y. Nakasha, T. Kikkawa, H. Takahashi, K. Joshin, Y. Watanabe, H. Tanaka, and M. Takikawa" Low-Distortion GaAs-Based Field Effect Transistors with InGaP Channel Layer for High-Voltage Operation" Technical Digest in 1998 IEDM, pp.63-66.