Carrier lifetime and recombination in 1.3 μm P-doped InAs qauntum-dot lasers

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6133, Issue , 2006, Pages

  Dikshit, A A ^a   Vangapally, Vishnu ^a   Pikal, J M ^a  

^a UNIVERSITY OF WYOMING   (United States)

Author keywords

Auger recombination; Quantum dots; Semiconductor lasers

Indexed keywords

AUGER RECOMBINATION; INTRINSIC RECOMBINATION; RATE EQUATION MODELS; THRESHOLD CURRENT;

CAPACITANCE; CHARGE CARRIERS; FREQUENCY RESPONSE; LIGHT MODULATION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR QUANTUM DOTS;

SEMICONDUCTOR LASERS;

EID: 33646743563     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.646797     Document Type: Conference Paper

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