Increased monomolecular recombination in MOCVD grown 1.3-μm InGaAsN-GaAsP-GaAs QW lasers from carrier lifetime measurements

IEEE Photonics Technology Letters

Volumn 17, Issue 5, 2005, Pages 953-955

  Anton, O ^a   Menoni, Carmen S ^a   Yeh, J Y ^b   Mawst, L J ^b   Pikal, J M ^c   Tansu, N ^d  

^a Department of Chemical and Biological Engineering and School of Biomedical Engineering   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

^c UNIVERSITY OF WYOMING   (United States)

^d Lehigh University   (United States)

Author keywords

InGaAsN; Laser diodes

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CARRIER LIFETIME MEASUREMENTS; ELECTRICAL PARASITIC EFFECTS; MONOMOLECULAR RECOMBINATION;

QUANTUM WELL LASERS;

EID: 18944397359     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.844332     Document Type: Article

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