Electrical properties of undoped bulk ZnO substrates

Journal of Electronic Materials

Volumn 35, Issue 4, 2006, Pages 663-669

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kozhukhova, E A ^a   Pearton, S J ^b   Norton, D P ^b   Osinsky, A ^c   Dabiran, Amir ^c  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

Bulk crystals; Electron traps; ZnO

Indexed keywords

BULK CRYSTALS; BULK ZNO SUBSTRATES; CERMET SUBSTRATES; THERMAL INSTABILITY;

CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON TRAPS; FERMI LEVEL; SEMICONDUCTOR DOPING; SUBSTRATES; THERMODYNAMIC STABILITY;

ZINC OXIDE;

EID: 33646724529     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-006-0117-x     Document Type: Conference Paper

References (55)

1. I.P. Kuz'mina and V.A. Nikitenko, Zinc Oxide: Growth and Optical Properties (Nauka, Moscow, 1984) (in Russian).
2. D.C. Look, B. Claflin, Ya.I. Alivov, and S.J. Park, Phys. Status Solidi (a) 201, 2203 (2004).
3. D.C. Look, Mater. Sci. Eng. B80, 383 (2001).
4. N. Shibata, T. Uemura, H. Yamaguchi, and T. Yasukawa, Phys. Status Solidi (a) 200, 58 (2003).
5. S.J. Pearton, D.P. Norton, K. Ip, Y.W. Heo, and T. Steiner, Prog. Mater. Sci. 50, 293 (2005).
6. Ya.I. Alivov, E.V. Kalinina, A.E. Cherenkov, D.C. Look, B.M. Ataev, A.K. Omaev, M.V. Chukichev, and D.M. Bagnall, Appl. Phys. Lett. 83, 4719 (2003).
7. Ya.I. Alivov, J.E. Van Nostrand, D.C. Look, M.V. Chukichev, and B.M. Ataev, Appl. Phys. Lett. 83, 2943 (2003).
8. A. Osinsky, J.W. Dong, M.Z. Kauser, B. Hertog, A.M. Dabiran, P.P. Chow, S.J. Pearton, O. Lopatiuk, and L. Chernyak, Appl. Phys. Lett. 85, 4272 (2004).
9. O. Lopatiuk, W. Burdett, L. Chernyak, K.P. Ip, Y.W. Heo, D.P. Norton, S.J. Pearton, B. Hertog, P.P. Chow, and A. Osinsky, Appl. Phys. Lett. 86, 012105 (2005).
10. A. Polyakov, N. Smirnov, E. Kozhukhova, V. Vdovin, K. Ip, Y.W. Heo, D.P. Norton, and S.J. Pearton, Appl. Phys. Lett. 83, 1575 (2003).
11. D.-K. Hwang, S.-H. Kang, J.-H. Lim, E.-J. Yang, J.-Y. Oh, J.-H. Yang, and S.-J. Park, Appl. Phys. Lett. 86, 222101 (2005).
12. T.-H. Moon, M.-C. Jeong, W. Lee, and J.-M. Myoung, Appl. Surf. Sci. 240, 280 (2005).
13. A. Tsukazaki et al., Nat. Mater. 4, 42 (2005).
14. S. Kim, B. Kang, F. Ren, Y. Heo, K. Ip, D.P. Norton, and S.J. Pearton, Appl. Phys. Lett. 84, 1904 (2004).
15. J.H. Lim, K.K. Kim, D.K. Hwang, H.K. Kim, J.H. Oh, and S.J. Park, J. Electrochem. Soc. 152, G179 (2005).
16. H. Sheng, N,W. Emanetoglu, S. Muthukumar, S. Feng, and Y. Lu, J. Electron. Mater. 31, 811 (2002).
17. A. Polyakov, N. Smirnov, E. Kozhukhova, V. Vdovin, K. Ip, Y.W. Heo, D.P. Norton, and S.J. Pearton, Appl. Phys. Lett. 83, 1575 (2003).
18. K. Ip, Y.W. Heo, D.P. Norton, S.J. Pearton, J.R. LaRoche, and F. Ren, Appl. Phys. Lett. 85, 1169 (2004).
19. M. Wraback, H. Shen, S. Liang, C.R. Gorla, and Y. Lu, Appl. Phys. Lett. 76, 507 (1999).
20. T. Aoki, D.C. Look, and Y. Hatanaka, Appl. Phys. Lett. 76, 3257 (2000).
21. S. Krishnamoorthy, A.A. Iliadis, A. Inumpudi, S. Choopun, R.D. Vispute, and T. Venkatesan, Solid-State Electron. 46, 1631 (2002).
22. J.-M. Lee, K.-K. Kim, S.-J. Park, and W.-K. Choi, Appl. Phys. Lett. 78, 3842 (2001).
23. A.A. Iliadis, R.D. Vispute, T. Venkatesan, and K.A. Jones, Thin Solid Films 420-421, 478 (2002).
24. A. Inumpudi, A.A. Iliadis, S. Krishnamoorthy, S. Choopun, R.D. Vispute, and T. Venkatesan, Solid-State Electron. 46, 1665 (2002).
25. H.-K. Kim, S.-H. Han, T.-Y. Seong, and W.-K. Choi, J. Appl. Phys. Lett. 77, 1647 (2000).
26. H.-K. Kim, S.-H. Han, T.-Y. Seong, and W.-K. Choi, J. Electrochem. Soc. 148, G114 (2001).
27. H. Sheng, N.W. Emanetoglu, S. Muthukumar, S. Feng, and Y. Lu, J. Electron. Mater. 31, 811 (2002).
28. H. Sheng, N.W. Emanetoglu, S. Muthukumar, B.V. Yakshinskiy, S. Feng, and Y. Lu, J. Electron. Mater. 32, 935 (2003).
29. H.-K. Kim, K.-K Kim, S.-J. Park, T.-Y. Seong, and I. Adesida, J. Appl. Phys. 94, 4225 (2003).
30. S.Y. Kim, H.W. Jang, J.K. Kim, C.M. Jeon, W.I. Park, G.G. Yi, and J.-L. Lee, J. Electron. Mater. 31, 868 (2002).
31. N. Ohashi, J. Tanaka, T. Ohgaki, H. Haneda, M. Ozawa, and T. Tsurumi, J. Mater. Res. 17, 1529 (2002).
32. H. Sheng, S. Muthukumar, N.W. Emanetoglu, and Y. Lu, Appl. Phys. Lett. 80, 2132 (2002).
33. F.D. Auret, S.A. Goodman, M. Hayes, M.J. Legodi, and H.A. van Laarhoven, Appl. Phys. Lett. 79, 3074 (2001).
34. B. J. Coppa, R.F. Davis, and R. J. Nemanich, Appl. Phys. Lett. 82, 400 (2003).
35. Y. Liu, C.R. Gorla, S. Liang, N. Emanetoglu, Y. Lu, H. Shen, and M. Wraback, J. Electron. Mater. 29, 69 (2000).
36. A.Y. Polyakov, N. Smirnov, E. Kozhukhova, V. Vdovin, K. Ip, Y.W. Heo, D.P. Norton, and S.J. Pearton, Appl. Phys. Lett. 83, 1575 (2003).
37. K. Ip, K. Baik, Y.W. Heo, D.P. Norton, S.J. Pearton, J.R. LaRoche, F. Ren, and J.M. Zavada, J. Vac. Sci. Technol. B 21, 2378 (2003).
38. See, for example: J.M.D. Coey, M. Venkatesan, and C.B. Fitzgerald, Nat. Mater. 4, 173 (2005) and references therein;
39. M. Venkatesan, C.B. Fitzgerald, and J.M.D. Coey, Nature 430, 630 (2004);
40. J.M.D. Coey, J. Appl. Phys. 97, 10D313 (2005).
41. K. Sato and H. Katayama-Yoshida, Semicond. Sci. Technol. 17, 367 (2002).
42. T. Fukumura, Y. Yamada, H. Toyosaki, T. Hasegawa, H. Koinuma, and M. Kawasaki, Appl. Surf. Sci. 223, 62 (2004).
43. S.J. Pearton, W.H. Heo, M. Ivill, D.P. Norton, and T. Steiner, Semicond. Sci. Technol. 19, R59 (2004).
44. E.V. Kortounova, N.G. Nikolaeva, P.P. Chvanski, and B.A. Dorogovin, 2nd International Workshop on Zinc Oxide, ed. D.C. Look (Warrendale, PA: MRS, 2002).
45. J.W. Kolis, E. Michaels, P. Hartlieb, and Z. Sitar, 2nd International Workshop on Zinc Oxide, ed. D.C. Look, (Warrendale, PA: MRS, 2002).
46. E. Ohshima, H. Ogino, I. Niikura, K. Maeda, M. Sato, M. Ito, and T. Fukuda, J. Cryst. Growth 260, 166 (2004).
47. A. Polyakov et al., J. Appl. Phys. 94, 2895 (2003).
48. A.Y. Polyakov et al., J. Appl. Phys. 94, 400 (2003).
49. Y.M. Strzhemechny et al., J. Electron. Mater. 34, 399 (2005).
50. B.I. Shklovsky and A.L. Efros, Electronic Properties of Doped Semiconductors (Moscow: Nauka, 1979) (in Russian).
51. A. Dissanayake, M. Elahi, H.X. Jiang, and J.Y. Lin, Phys. Rev. B45, 13996 (1992).
52. J.Y. Lin, A. Dissanayake, G. Brown, and H.X. Jiang, Phys. Rev. B42, 5855 (1990).
53. L.S. Berman and A.A. Lebedev, Capacitance Spectroscopy of Deep Centers in Semiconductors (Leningrad: Nauka, 1981) (in Russian).
54. A.G. Milnes, Deep Impurities in Semiconductors (New York: Wiley, 1980).
55. A.Y. Polyakov et al., J. Vac. Sci. Technol., B 23, 274 (2005).