MgZnO/AIGaN heterostructure light-emitting diodes

Applied Physics Letters

Volumn 85, Issue 19, 2004, Pages 4272-4274

  Osinsky, A ^a   Dong, J W ^a   Kauser, M Z ^a,d   Hertog, B ^a   Dabiran, A M ^a   Chow, P P ^a   Pearton, S J ^b   Lopatiuk, O ^c   Chemyak, L ^c  

^a SVT ASSOCIATES   (United States)

^b University of Florida   (United States)

^c UNIVERSITY OF CENTRAL FLORIDA   (United States)

^d University of Minnesota   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY BAND DIAGRAMS; OPTICAL TRANSITION; STRAINED STRUCTURE; TRIPLE HETEROSTRUCTURES (THS);

CURRENT VOLTAGE CHARACTERISTICS; ELECTRON BEAMS; HETEROJUNCTIONS; LIGHT EMISSION; PHOTOCURRENTS; PIEZOELECTRIC MATERIALS; SEMICONDUCTING ALUMINUM COMPOUNDS; ZINC OXIDE;

LIGHT EMITTING DIODES;

EID: 10844268962     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1815377     Document Type: Conference Paper

References (8)

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