Proton implantation effects on electrical and recombination properties of undoped ZnO

Journal of Applied Physics

Volumn 94, Issue 5, 2003, Pages 2895-2900

  Polyakov, A Y ^a   Smirnov, N B ^a   Govorkov, A V ^a   Kozhukhova, E A ^a   Vdovin, V I ^a   Ip, K ^a   Overberg, M E ^b   Heo, Y W ^b   Norton, D P ^b   Pearton, S J ^b   Zavada, J M ^c   Dravin, V A ^d  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b UNIVERSITY OF FLORIDA   (United States)

^c U S ARMY RESEARCH OFFICE   (United States)

^d LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ELECTRIC PROPERTIES; ELECTRON TRAPS; ION IMPLANTATION; PHOTOLUMINESCENCE; PROTONS;

PROTON IMPLANTATION;

ZINC OXIDE;

EID: 0141522862     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1597944     Document Type: Article

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