Pt–Ga Ohmic contacts to n-ZnO using focused ion beams

Solid-State Electronics

Volumn 46, Issue 10, 2002, Pages 1665-1668

  Inumpudi, A ^a   Iliadis, A A ^a   Krishnamoorthy, S ^a   Choopun, S ^b   Vispute, R D ^b   Venkatesan, T ^b  

^a UNIVERSITY OF MARYLAND   (United States)

^b Bldg 142   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC RESISTANCE; ELECTRON TUNNELING; INTERFACES (MATERIALS); ION BEAMS; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SUBSTRATES; ZINC OXIDE;

CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 0036779176     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00176-4     Document Type: Article

References (7)